Product Description
2N4403/2N3906 PNP Transistor Transistors PNP Silicon Features MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage V CEO 40 Vdc Collector - Base Voltage V CBO 40 Vdc Emitter - Base Voltage V EBO 5.0 Vdc Collector Current - Continuous I C 600 mAdc Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 625 5.0 mW mW/ ° C Total Device Dissipation @ T C = 25 ° C Derate above 25 ° C P D 1.5 12 W mW/ ° C Operating and Storage Junction Temperature Range T J , T stg -55 to +150 ° C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient R q JA 200 ° C/W Thermal Resistance, Junction-to-Case R q JC 83.3 ° C/W
