Product Description
61C65L-70P Ram Philips Components Data sheet Product specification date of issue | June 1990 FEATURES * Operating supply voltage 5V+10% * Inputs and outputs ESD protected * Automatic power-down after a completed read access * Access time: 55 ns and 70 ns * Low current consumption: active 70 mA max. standby (TTL) 3 mA max. standby (CMOS) 100 pA max. (L-version) standby (CMOS) 1 A max. (LL-version) * Suitable for battery back-up operation: (FCB61C65L/LL only) data retention voltage 2V min. data retention current 50 uA max. (L-version) 1 pA max. (LL-version) * Latched data outputs giving stable data between consecutive accesses * Easy memory expansion * Common data I/O interface * Allinputs and outputs TTL and CMOS compatible * Allinputs have a Schmitt trigger switching action * Three-state outputs Operating temperature 0 °C to +70°C data retention current FCB61C65(L/LL) 8K x8 Fast CMOS low-power static RAM FOR DETAILED INFORMATION SEE RELEVANT DATA BOOK OR DATA SHEET GENERAL DESCRIPTION The FCB61C65(L/LL) is a 65536-bit fast, low-power, static random access memory organized as 8192 words of 8 bits each. The chip enable inputs CE1 and CE2 are available for memory expansion and to control the low-power / standby mode. The device operates froma V power supply and has an access time of 55 ns and 70ns. The FCB61C65({L/LL) is ideally suited for memory applications where fast access time, low power and ease of use are required. The FCB61C65(L/LL) is a CMOS device which uses a 6 transistor memory cell. The IC is fabricated ina CMOS double-metal single-poly process using ion-implanted silicon gate technology. TYPE NUMBER /PINS| PIN POSITION |MATERIAL CODE FCB61C65 (L/LL)-XXP 28 | DIL (600 mil) plastic SOT117 FCB61C65 (U/LL)-XXT 28 |SO28XL(330mil); plastic SOT213 43
